K2741 - Toshiba Semiconductor

K2741 2SK2741

2SK2741 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2741 Chopper Regulator, DC−DC Converter and Motor Drive Applications l 4 V gate drive l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.12 Ω (typ.) : |Yfs| = 5.0 S (typ.) Unit: mm : IDSS = 100 µA (max.

Features

sistance, channel to ambient Symbol Rth (ch−a) Max 50 Unit °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C (initial), L = 7 mH, RG = 25 Ω, IAR = 5 A Note 4: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-01-25 2SK2741 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown vol.