K2733 - Toshiba Semiconductor

K2733 2SK2733

2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.9 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode .

Features

mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown v.