SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2663 ( F1E90HVX2 ) 900V 1A OUTLINE DIMENSIONS Case : E-pack (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power sup.
Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.
APPLICATION
Switching power supply of AC 240V input High voltage power supply Inverter
RATINGS
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
2SK2663 ( F1E90HVX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 900V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2662 |
Toshiba Semiconductor |
2SK2662 | |
2 | K2666 |
Shindengen America |
2SK2666 | |
3 | K2668 |
Shindengen |
2SK2668 | |
4 | K2669 |
Shindengen Electric |
2SK2669 | |
5 | K2600G |
JIEJIE |
Sidac | |
6 | K2600G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
7 | K2600S |
JIEJIE |
Sidac | |
8 | K2601 |
Toshiba Semiconductor |
2SK2601 | |
9 | K2604 |
Toshiba Semiconductor |
2SK2604 | |
10 | K2605 |
Toshiba Semiconductor |
2SK2605 | |
11 | K2607 |
Toshiba Semiconductor |
Silicon N-Channel FET | |
12 | K2608 |
Toshiba Semiconductor |
2SK2608 |