The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minim.
Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass-passivated junctions High voltage lcmp ignitors ABSOLUTE MAXIMUM RATINGS (TA=25ºC, RH=45%-75%, unless otherwise noted) Parameter Symbol Sto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2600G |
JIEJIE |
Sidac | |
2 | K2600G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
3 | K2601 |
Toshiba Semiconductor |
2SK2601 | |
4 | K2604 |
Toshiba Semiconductor |
2SK2604 | |
5 | K2605 |
Toshiba Semiconductor |
2SK2605 | |
6 | K2607 |
Toshiba Semiconductor |
Silicon N-Channel FET | |
7 | K2608 |
Toshiba Semiconductor |
2SK2608 | |
8 | K2610 |
Toshiba Semiconductor |
2SK2610 | |
9 | K2611 |
Toshiba Semiconductor |
2SK2611 | |
10 | K2611 |
Winsemi |
Silicon N-Channel MOSFET | |
11 | K2611B |
Winsemi |
Silicon N-Channel MOSFET | |
12 | K2613 |
Toshiba Semiconductor |
2SK2613 |