Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
5˚
26.5±0.5
5˚
23.4 22.0±0.5
2.0 1.2
5˚
18.6±0.5
5˚ 5˚
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 900 ±30 ±8 ±16 60 100 3 150 −.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2370 |
NEC |
2SK2370 | |
2 | K2371 |
NEC |
2SK2371 | |
3 | K2372 |
NEC |
2SK2372 | |
4 | K2377 |
Panasonic |
Silicon N-Channel Power F-MOS | |
5 | K2312 |
Toshiba Semiconductor |
2SK2312 | |
6 | K2313 |
Toshiba Semiconductor |
2SK2313 | |
7 | K2313 |
Toshiba Semiconductor |
2SK2313 | |
8 | K2324 |
Panasonic |
2SK2324 | |
9 | K2325TJ600 |
IXYS |
Medium Voltage Thyristor | |
10 | K2325TJ650 |
IXYS |
Medium Voltage Thyristor | |
11 | K2333 |
Shindengen |
Power MOSFET | |
12 | K2334 |
Hitachi |
Silicon N-Channel MOS FET |