2SK2312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 13 mΩ (typ.) : |Yfs| = 40 S (typ.) Unit: mm : IDSS = 100 μA (max) .
loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2313 |
Toshiba Semiconductor |
2SK2313 | |
2 | K2313 |
Toshiba Semiconductor |
2SK2313 | |
3 | K2324 |
Panasonic |
2SK2324 | |
4 | K2325TJ600 |
IXYS |
Medium Voltage Thyristor | |
5 | K2325TJ650 |
IXYS |
Medium Voltage Thyristor | |
6 | K2333 |
Shindengen |
Power MOSFET | |
7 | K2334 |
Hitachi |
Silicon N-Channel MOS FET | |
8 | K2340 |
Panasonic |
2SK2340 | |
9 | K2341 |
NEC |
2SK2341 | |
10 | K2350 |
Toshiba Semiconductor |
2SK2350 | |
11 | K2352 |
Toshiba |
2SK2352 | |
12 | K2354 |
NEC |
2SK2354 |