K2007 - Hitachi Semiconductor

K2007 2SK2007

2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2007 Absolute Maximum Ratings (Ta = 25°C) Item Drain t.

Features

• Low on-resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2007 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I
*1 D(pulse) I DR Pch
*2 Tch Tstg Ratings 250 ±30 20 80 20 100 15.