The new K2xx0yHU is a higher energy SIDAC switch for gas ignition applications requiring higher current pulse current especially at low repetition rate. It is offered in a DO-15 leaded package and DO-214AA surface mount package. Voltage activation of this solid state switch is accomplished with peak voltage level of 190 to 260Volts. The SIDAC is a silicon bi.
• A C circuit oriented
• T riggering Voltage of 190 to 260V
• 280A Pulse current capability
• RoHS compliant
• Unidirectional
Applications
Suitable for high voltage power supplies, natural gas igniters, and Xenon flash ignition.
Electrical Specifications (TJ = 25°C, unless otherwise specified)
Symbol VBO
VDRM IT(RMS) VTM IH
Parameters
Breakover/Trigger Voltage
Repetitive Peak Off-state Voltage On-state RMS Current Peak On-state Voltage
Dynamic Holding Current
Test Conditions
K2000yHU K2200yHU K2400yHU K2500yHU K2000yHU K2200yHU K2400yHU K2500yHU 50/60Hz, TJ < 125°C
IT = 1A RL.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2000SH |
Littelfuse |
High Energy Bidirectional SIDACs | |
2 | K2000S |
JIEJIE |
Sidac | |
3 | K2000-R |
Fuji Electric |
2SK2000-R | |
4 | K2000EH70 |
Littelfuse |
High Energy Bidirectional SIDACs | |
5 | K2000G |
JIEJIE |
Sidac | |
6 | K2000G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
7 | K2000GH |
Littelfuse |
High Energy Bidirectional SIDACs | |
8 | K2000GHU |
Littelfuse |
High Energy Unidirectional SIDACs | |
9 | K2003 |
Fuji Electric |
2SK2003-01MR | |
10 | K2004-01L |
Fuji Electric |
2SK2004-01L | |
11 | K2007 |
Hitachi Semiconductor |
2SK2007 | |
12 | K2008 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |