K1829 - Toshiba

K1829 2SK1829

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package Marking Equivalent Circuit 2SK1829 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source volta.

Features

eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 Electrical Characteristics (Ta = 25°C) 2SK1829 Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capaci.