TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications · 4 V gate drive · Low threshold voltage: Vth = 0.8~2.5 V · High speed · Enhancement-mode · Small package Marking Equivalent Circuit 2SK1826 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Drain-source vo.
capacitance Switching time Turn-on time Turn-off time Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 50 ¾ ¾ V IDSS VDS = 50 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 5 V, ID = 0.1 mA 0.8 ¾ 2.5 V ïYfsï VDS = 5 V, ID = 10 mA 20 ¾ ¾ mS RDS (ON) ID = 10 mA, VGS = 4.0 V ¾ 20 50 W Ciss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 6.3 ¾ pF Crss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 1.3 ¾ pF Coss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 5.7 ¾ pF ton VDD = 5 V, ID = 10 mA, VGS = 0~4.0 V ¾ 0.11 ¾ ms toff VDD = 5 V, ID = 10 mA, VGS = 0~4.0 V ¾ 0.15 ¾ Switch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K1821 |
Fuji Electric |
2SK1821-01M | |
2 | K1827 |
Toshiba |
2SK1827 | |
3 | K1828 |
Toshiba |
2SK1828 | |
4 | K1829 |
Toshiba |
2SK1829 | |
5 | K180 |
Aeroflex |
Silicon Zener Diodes | |
6 | K180 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
7 | K1800G |
JIEJIE |
Sidac | |
8 | K1800G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
9 | K1800S |
JIEJIE |
Sidac | |
10 | K1800y |
Littelfuse |
Thyristors | |
11 | K1801BM1B |
ETC |
16-bit microprocessor | |
12 | K1801VM1A |
ETC |
16-bit microprocessor |