TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm A.
nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, chan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K13A65U |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | K13A |
FOX |
Auto Grade Tuning Fork | |
3 | K13A25D |
Toshiba Semiconductor |
TK13A25D | |
4 | K13A50D |
Toshiba |
TK13A50D | |
5 | K1300 |
Champion |
5V Crystal Clock Oscillators | |
6 | K1300G |
JIEJIE |
Sidac | |
7 | K1300G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
8 | K1300S |
JIEJIE |
Sidac | |
9 | K1300y |
Littelfuse |
Thyristors | |
10 | K1304 |
Renesas Technology |
2SK1304 | |
11 | K1305 |
Renesas |
Silicon N-Channel MOSFET | |
12 | K1305 |
Hitachi |
2SK1305 |