K1305 - Hitachi

K1305 2SK1305

2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1305 Absolute Maximum .

Features

• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device  Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1305 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I
*1 D(pulse) I DR Pch
*2 Tch Tstg.