K1340 - Hitachi Semiconductor

K1340 2SK1340

2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1340 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volta.

Features

• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1340 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I
*1 D(pulse) I DR Pch
*2 Tch Tstg Ratings 900 ±30 5 12 5 100 150
  –55 to +150 U.