K1307 - Hitachi Semiconductor

K1307 2SK1307

www.DataSheet.co.kr 2SK1307 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S Datasheet pdf -.

Features

• Low on-resistance
• High speed switching
• 4 V gate drive device  Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Sy.