JS28F512M29EWLx - Numonyx

JS28F512M29EWLx 3 V supply flash memory

. . . . 7 Signal Descriptions . . . . . 13 Address inputs (A0-Amax) 13 Data inputs/outputs (DQ0-DQ7) . . . ..

Features

„ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.14MB/s) typical when using full buffer size in buffer program Memory organization — Uniform blocks, 128 Kbytes/64 Kwords each Program/Erase controller — Embedded byte/word program algorithms Program/ Erase Suspend and Resume — Read from any block during Pr.