. . . . 7 Signal Descriptions . . . . . 13 Address inputs (A0-Amax) 13 Data inputs/outputs (DQ0-DQ7) . . . ..
Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.14MB/s) typical when using full buffer size in buffer program Memory organization — Uniform blocks, 128 Kbytes/64 Kwords each Program/Erase controller — Embedded byte/word program algorithms Program/ Erase Suspend and Resume — Read from any block during Pr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JS28F512M29EW |
MICRON |
Parallel NOR Flash Embedded Memory | |
2 | JS28F512M29EWLx |
Numonyx |
3 V supply flash memory | |
3 | JS28F512P30BFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
4 | JS28F512P30BFx |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
5 | JS28F512P30EFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
6 | JS28F512P30EFx |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
7 | JS28F512P30TFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
8 | JS28F512P30TFx |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
9 | JS28F512P33BFD |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
10 | JS28F512P33EFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
11 | JS28F512P33TFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory | |
12 | JS28F008 |
Intel |
(JS28Fxxx) Advanced Boot Block Flash Memory |