JANTX2N6851 - International Rectifier

JANTX2N6851 POWER MOSFET

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.551B JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9230] ® P-CHANNEL -200 Volt, 0.80Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resi.

Features

s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight JANTX2N6851, JANTXV2N6851 Units -4.0 -2.4 -16 25 0.20 ±20 -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case f.