HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of t.
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM @TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery
TJ
Operating Junction and
TSTG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JANTX2N6800 |
International Rectifier |
POWER MOSFET | |
2 | JANTX2N6802 |
International Rectifier |
POWER MOSFET | |
3 | JANTX2N6806 |
International Rectifier |
P-CHANNNEL TRANSISTORS | |
4 | JANTX2N6806 |
International Rectifier |
P-CHANNNEL TRANSISTORS | |
5 | JANTX2N6845 |
International Rectifier |
POWER MOSFET | |
6 | JANTX2N6847 |
International Rectifier |
POWER MOSFET | |
7 | JANTX2N6849 |
International Rectifier |
P-Channel MOSFET | |
8 | JANTX2N6849U |
International Rectifier |
100V P-CHANNEL MOSFET | |
9 | JANTX2N6851 |
International Rectifier |
POWER MOSFET | |
10 | JANTX2N6756 |
International Rectifier |
N-Channel Transistor | |
11 | JANTX2N6758 |
International Rectifier |
N-CHANNEL TRANSISTORS | |
12 | JANTX2N6760 |
International Rectifier |
POWER MOSFET N-CHANNEL |