JANSR2N7407 - Intersil Corporation

JANSR2N7407 Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs

JANSR2N7407 Data Sheet December 1998 File Number 4636 Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event .

Features

• 18A, 250V, rDS(ON) = 0.170Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 15nA Per-RAD(Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
• Usable to 1E14 Neutrons/cm2 Symbol Packaging TO-254AA G S D Ordering Information PART NUMBER JANSR2N7407 PACKAG.