The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices wh.
• 3A, 500V, rDS(ON) = 2.70Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2
Ordering Information
PART NUMBER JANSR2N7402 PACKAGE TO-257AA
Also available at other.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JANSR2N7400 |
Intersil Corporation |
8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
2 | JANSR2N7401 |
Intersil Corporation |
6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
3 | JANSR2N7403 |
Intersil Corporation |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET | |
4 | JANSR2N7404 |
Intersil Corporation |
15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET | |
5 | JANSR2N7405 |
Intersil Corporation |
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
6 | JANSR2N7406 |
Intersil Corporation |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
7 | JANSR2N7407 |
Intersil Corporation |
Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs | |
8 | JANSR2N7408 |
Intersil Corporation |
Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs | |
9 | JANSR2N7410 |
Intersil Corporation |
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
10 | JANSR2N7411 |
Intersil Corporation |
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET | |
11 | JANSR2N7423 |
IRF |
RADIATION HARDENED POWER MOSFET | |
12 | JANSR2N7425 |
International Rectifier |
POWER MOSFET |