JANSR2N7281 - Intersil Corporation

JANSR2N7281 Radiation Hardened/ N-Channel Power MOSFET

JANSR2N7281 Formerly FRL430R4 Data Sheet November 1998 File Number 4294 Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 1.

Features

• 2A, 500V, rDS(ON) = 2.50Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 8nA Per-RAD (Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Symbol D G S Ordering Information PART NUMBER JANSR2N7281 PACKAGE TO-205AF BRAND JANSR2N7281 Package TO-205AF Die family TA17635. MIL-PRF-19500/604. D G S 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handl.