JANSR2N7278 - Intersil Corporation

JANSR2N7278 4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFET

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ . Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V .

Features

• 4A, 250V, rDS(ON) = 0.700Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 4nA Per-RAD(Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information PART NUMBER JANSR2N7278 PACKAGE TO-205AF BRAND JANSR2N7278 Die family TA17633. MIL-PRF-19500/604. Symbol D G S Packaging TO-205AF D G S CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling.