The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. All units feature open collector outputs with greater than 50V breakdown voltages combined with 500mA current carrying capabilities. Five diff.
• Seven npn Darlington pairs
• -55°C to 125°C ambient operating temperature range
• Collector currents to 600mA
• Output voltages from 50V to 95V
• Internal clamping diodes for inductive loads
• DTL, TTL, PMOS, or CMOS compatible inputs
• Hermetic ceramic package
HIGH RELIABILITY FEATURES
♦ Available to MIL-STD-883 and DESC SMD ♦ MIL-M38510/14101BEA - JAN2001J ♦ MIL-M38510/14102BEA - JAN2002J ♦ MIL-M38510/14103BEA - JAN2003J ♦ MIL-M38510/14104BEA - JAN2004J ♦ Radiation data available ♦ LMI level "S" processing available
PARTIAL SCHEMATICS
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microel.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JAN2001J |
Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
2 | JAN2003J |
Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
3 | JAN2004J |
Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
4 | JAN2801J |
Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
5 | JAN2802J |
Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
6 | JAN2803J |
Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
7 | JAN2804J |
Microsemi Corporation |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
8 | JAN2N1711 |
Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR | |
9 | JAN2N1870A |
Microsemi Corporation |
SCRs 1.25 Amp/ Planear | |
10 | JAN2N1871A |
Microsemi Corporation |
SCRs 1.25 Amp/ Planear | |
11 | JAN2N1872A |
Microsemi Corporation |
SCRs 1.25 Amp/ Planear | |
12 | JAN2N1874A |
Microsemi Corporation |
SCRs 1.25 Amp/ Planear |