• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5819 and DSB5817 and DSB5818 and 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100 MAXIMUM RATINGS Operating Temperature: -55°C to +125°C Storage Temperature: -55°C to +150°C Average Rectified.
metically sealed, DO
– 41 LEAD MATERIAL: Copper clad steel
60 80 100 100
0.38 0.38 0.38 0.38
0.69 0.69 0.69 0.69
NA NA NA NA
0.10 0.10 0.10 0.10
6.0 6.0 6.0 12.0
LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 70 ˚C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 12 ˚C/W maximum POLARITY: Cathode end is banded.
20 30 40 50 60 80 100
0.36 0.36 0.36 0.36 0.38 0.38 0.38
0.60 0.60 0.60 0.60 0.69 0.69 0.69
0.9 0.9 0.9 0.9 NA NA NA
0.10 0.10 0.10 0.10 0.10 0.10 0.10
5.0 5.0 5.0 5.0 12.0 12.0 12.0
MOUNTING POSITION: Any
22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (78.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | J6761UR-1 |
Compensated Deuices Incorporated |
1 AMP SCHOTTKY BARRIER RECTIFIERS | |
2 | J603 |
NEC |
2SJ603 | |
3 | J608 |
Sanyo Semiconductor Corporation |
2SJ608 | |
4 | J629 |
Sanyo Semicon Device |
2SJ629 | |
5 | J634 |
Sanyo Semicon Device |
2SJ634 | |
6 | J649 |
NEC |
2SJ649 | |
7 | J652 |
Sanyo Semicon Device |
2SJ652 | |
8 | J654 |
Sanyo |
P-Channl Silicon MOSFET | |
9 | J659 |
Sanyo |
P-Channel Silicon MOSFET | |
10 | J665 |
ON Semiconductor |
P-Channl Silicon MOSFET | |
11 | J6806D |
Fairchild Semiconductor |
FJAF6806D | |
12 | J681 |
Toshiba |
2SJ681 |