J681 - Toshiba

J681 2SJ681

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mod.

Features

V V V A A W mJ A mJ °C °C ０．８ MAX． １．1 MAX． Pulse(Note 1) JEDEC JEITA TOSHIBA ― ― 2-7J2B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1.