J113 - NXP

J113 N-channel silicon field-effect transistors

Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. .

Features

• High speed switching
• Interchangeability of drain and source connections
• Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA J111 Drain-source voltage Drain current VDS = 15 V; VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.1 V; VGS = 0 RDS on max. 30 50 100 Ω −VGS off min. max. 3 10 1 5 0.5 3 V V Ptot max. 400 4.