J113 NXP N-channel silicon field-effect transistors Datasheet, en stock, prix

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J113

NXP
J113
J113 J113
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Part Number J113
Manufacturer NXP (https://www.nxp.com/)
Description Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interch...
Features
• High speed switching
• Interchangeability of drain and source connections
• Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA J111 Drain-source voltage Drain current VDS = 15 V; VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.1 V; VGS = 0 RDS on max. 30 50 100 Ω −VGS off min. max. 3 10 1 5 0.5 3 V V Ptot max. 400 4...

Document Datasheet J113 Data Sheet
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