IXYH30N65C3H1 - IXYS

IXYH30N65C3H1 IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching IXYT30N65C3H1HV IXYH30N65C3H1 VCES = 650V IC110 = 30A VCE(sat)  2.7V tfi(typ) = 24ns TO-268HV Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditio.

Features

 Optimized for 20-60kHz Switching
 Square RBSOA
 High Voltage
 Avalanche Rated
 Short Circuit Capability
 Anti-Parallel Sonic Diode Advantages
 High Power Density
 Extremely Rugged
 Low Gate Drive Requirement Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts
 High Frequency Power Inverters © 2014 IXYS CORPORATION, All Rights Reserved DS100545A(7/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qg.