IXYH30N65B3D1 - IXYS

IXYH30N65B3D1 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 5-30kHz Switching IXYH30N65B3D1 IXYQ30N65B3D1 VCES = 650V IC110 = 30A VCE(sat)  2.1V tfi(typ) = 33ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C .

Features

 Optimized for Low 5-30kHz Switching
 Square RBSOA
 Anti-Parallel Fast Diode
 Avalanche Rated
 Short Circuit Capability Advantages
 High Power Density
 Extremely Rugged
 Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 10 A 1.5 mA 100 nA 1.8 2.1 V 2.2 V Applications
 Power Inverters
 UPS
.