IXTH20N60 - IXYS

IXTH20N60 N-Channel MOSFET

MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS V DGR VGS VGSM ID25 IDM TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM P D TJ TJ.

Features

l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) I GSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 600 V DS = V, GS I D = 250 µA 2 V GS = ±20 V, DC V DS = 0 VDS = 0.8
• VDSS VGS = 0 V TJ = 25°C TJ = 125°C V = 10 V, I = 0.5 I GS D D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 4.5 V ±100 nA 200 µA 1 mA 0.35 Ω Applic.