IXGR32N170AH1 - IXYS

IXGR32N170AH1 High Voltage IGBT

Advance Technical Information www.DataSheet4U.com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.2 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient .

Features

z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Mounting force with clamp 50/60 Hz, 1 minute 22...130/5...30 2500 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight Symbol Test Conditions Characteristic Values (T.