www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM IXGR 24N60C (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC =.
l l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS, t = 1minute leads-to-tab DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5.0 200 1 ±100 2.1 2.5 V V µA mA nA V Advantages l l l l l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE Uninte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGR120N60B |
IXYS |
HiPerFAST IGBT ISOPLUS247 | |
2 | IXGR120N60C2 |
IXYS |
IGBT | |
3 | IXGR16N170AH1 |
IXYS |
High Voltage IGBT | |
4 | IXGR32N170AH1 |
IXYS |
High Voltage IGBT | |
5 | IXGR32N170H1 |
IXYS |
High Voltage IGBT | |
6 | IXGR32N60CD1 |
IXYS Corporation |
HiPerFAST IGBT | |
7 | IXGR32N90B2D1 |
IXYS |
IGBT | |
8 | IXGR35N120B |
IXYS Corporation |
(IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247 | |
9 | IXGR35N120C |
IXYS Corporation |
(IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247 | |
10 | IXGR40N60B2 |
IXYS |
HiPerFAST IGBT | |
11 | IXGR40N60B2D1 |
IXYS |
HiPerFAST IGBT | |
12 | IXGR40N60C |
IXYS Corporation |
HiPerFAST IGBT ISOPLUS247 |