HiPerFASTTM IGBT B2-Class High Speed IGBTs IXGH 50N60B2 IXGT 50N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.0 V = 65 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load.
z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 125°C 1.6 1.5 2.0 V µA mA nA V V z z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 40 A, VGE = 15 V PFC circuits Uninter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH50N60B |
IXYS Corporation |
(IXGx50N60B) HiPerFAST IGBT | |
2 | IXGH50N60A |
IXYS Corporation |
HiPerFAST IGBT - Surface Mountable | |
3 | IXGH50N60AS |
IXYS Corporation |
HiPerFAST IGBT - Surface Mountable | |
4 | IXGH50N60C2 |
IXYS |
IGBT | |
5 | IXGH50N120C3 |
IXYS |
IGBT | |
6 | IXGH50N90B2 |
IXYS |
HiPerFAST IGBT B2-Class High Speed IGBTs | |
7 | IXGH50N90B2D1 |
IXYS Corporation |
HiPerFAST IGBT | |
8 | IXGH10N170 |
IXYS |
High Voltage IGBT | |
9 | IXGH10N170A |
IXYS |
High Voltage IGBT | |
10 | IXGH10N300 |
IXYS Corporation |
High Voltage IGBT | |
11 | IXGH10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
12 | IXGH10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT |