www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET ch.
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 12.5 mW
ww.DataSheet4U.com
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
• ID25 Note 1
Applications
• DC-DC convert.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFX15N100 |
IXYS |
HiPerFET Power MOSFETs | |
2 | IXFX100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFX100N65X2 |
IXYS |
Power MOSFET | |
4 | IXFX120N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFX120N25 |
IXYS |
HiPerFET Power MOSFETs | |
6 | IXFX120N25P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
7 | IXFX120N30T |
IXYS |
GigaMOS Power MOSFET | |
8 | IXFX120N30T |
IXYS |
GigaMOS Power MOSFET | |
9 | IXFX120N65X2 |
IXYS |
Power MOSFET | |
10 | IXFX140N25T |
IXYS |
GigaMOS Power MOSFET | |
11 | IXFX140N25T |
IXYS |
GigaMOS Power MOSFET | |
12 | IXFX14N100 |
IXYS |
HiPerFET Power MOSFETs |