IXFX14N100 - IXYS

IXFX14N100 HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°.

Features

q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q AC motor control q Temperature and lighting controls Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) q High power surface mountable package q High power density 97535B (1/99) Sym.