Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25.
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
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DS100353A(1/20)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5
• ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(o.
No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | IXFT15N100Q |
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2 | IXFT15N100 |
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3 | IXFT15N80Q |
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4 | IXFT150N17T2 |
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5 | IXFT150N20T |
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6 | IXFT10N100 |
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7 | IXFT120N15P |
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8 | IXFT12N100 |
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9 | IXFT12N100F |
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10 | IXFT12N50F |
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11 | IXFT13N100 |
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12 | IXFT13N80Q |
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