IXFT15N100Q - IXYS Corporation

IXFT15N100Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) I GSS IDSS RDS.

Features

z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability classification z Low RDS (on) low Qg z Avalanche energy and current rated z Fast intrinsic rectifier Advantages z Easy to mount z Space savings z High power density © 2001 IXYS All rights reserved 98627A (9/01) IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TO-247 AD (IXFH) Outline g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC R thCK V = 10 V; I = 0.5
• I , pulse test DS D D.