HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: IXFM21N50 IXFM24N50 Symbol Test Conditions Maximum Ratings VDSS ID25 RDS(on) 500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω t rr ≤ 250 ns TO-247 AD (IXFH) VDSS VDGR VGS V GSM ID25 IDM IAR EA.
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Symbol
VDSS VGS(th) IGSS IDSS
Test Conditions
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
500 2
TJ = 25°C TJ = 125°C
V 4V
±100 nA
200 µA 1 mA
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFM20N60 |
IXYS Corporation |
Power MOSFET | |
2 | IXFM20N60 |
INCHANGE |
N-Channel MOSFET | |
3 | IXFM21N50 |
IXYS Corporation |
Power MOSFET | |
4 | IXFM10N100 |
IXYS Corporation |
Power MOSFET | |
5 | IXFM10N90 |
ETC |
HiPerFET Power MOSFETs | |
6 | IXFM10N90 |
IXYS |
Power MOSFETs | |
7 | IXFM11N80 |
IXYS Corporation |
Power MOSFET | |
8 | IXFM12N100 |
IXYS Corporation |
Power MOSFET | |
9 | IXFM12N90 |
ETC |
HiPerFET Power MOSFETs | |
10 | IXFM12N90 |
IXYS |
Power MOSFETs | |
11 | IXFM13N50 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
12 | IXFM13N80 |
IXYS Corporation |
Power MOSFET |