IXFK48N55 - IXYS

IXFK48N55 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated IXFK 48N55 IXFX 48N55 VDSS = 550 V ID25 = 48 A =RDS(on) 110 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I D25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW .

Features

• Internationalstandardpackages
• Low R HDMOSTM process DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic rectifier Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols Advantages
• PLUS 247TMpackage for clip or spring mounting
• Space savings
• High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved .