isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max)@VGS=10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and .
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.6mΩ(Max)@VGS=10V
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switch-Mode and Resonant-Mode Power Supplies
·DC-DC Converters
·AC and DC Motor Drives
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
420
A
IDM
Drain Current-Single Plused
1000
A
PD
Total Dissipation @TC=25℃
1670
.
Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFK40N60 |
IXYS Corporation |
HiPerFET Power MOSFET | |
2 | IXFK40N90P |
IXYS Corporation |
Power MOSFET | |
3 | IXFK43N60 |
IXYS Corporation |
HiPerFET Power MOSFET | |
4 | IXFK44N50 |
IXYS Corporation |
Power MOSFET | |
5 | IXFK44N50F |
ETC |
N-Channel Power MOSFET | |
6 | IXFK44N50P |
IXYS |
Power MOSFET | |
7 | IXFK44N60 |
IXYS Corporation |
Power MOSFET | |
8 | IXFK44N80Q3 |
IXYS |
N-Channel Power MOSFET | |
9 | IXFK48N50 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFK48N50Q |
ETC |
HiPer FET Power MOSFETs Q-CLASS | |
11 | IXFK48N55 |
IXYS |
Power MOSFET | |
12 | IXFK48N60P |
IXYS Corporation |
Power MOSFET |