IXFH13N80 - IXYS Corporation

IXFH13N80 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 V DSS 800 V 800 V I D25 11 A 13 A trr £ 250 ns R DS(on) 0.95 W 0.80 W Symbol VDSS VDGR VGS VGSM ID25 IDM I AR EAR dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°.

Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA 800 VDS = VGS, ID = 4 mA 2.0 VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5
• ID25 11N80 13N80 Pulse test, t £ 300 ms, duty cycle d £ 2 % V 4.5 V ±100 nA 25.