PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP) VDSS ID25 trr RDS(on) = 800V = 10A ≤ 1.1Ω ≤ 250ns TO-3P (IXFQ) G S D (TAB) G DS D (TAB) G D S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md .
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1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-3P TO-247 (TO-220,TO-247)
300 260 1.13 / 10 2.5 3.0 5.5 6.0 Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25
International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive and to Protect
Advantages
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Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 0.5
• ID25, N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFH10N100 |
IXYS Corporation |
Power MOSFET | |
2 | IXFH10N60 |
IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching | |
3 | IXFH10N65 |
IXYS Corporation |
Power MOSFET | |
4 | IXFH10N90 |
ETC |
HiPerFET Power MOSFETs | |
5 | IXFH10N90 |
IXYS Corporation |
Power MOSFETs | |
6 | IXFH100N25P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
7 | IXFH102N15T |
IXYS Corporation |
Power MOSFET | |
8 | IXFH102N15T |
INCHANGE |
N-Channel MOSFET | |
9 | IXFH110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
10 | IXFH110N15T2 |
INCHANGE |
N-Channel MOSFET | |
11 | IXFH110N15T2 |
IXYS Corporation |
TrenchT2 HiperFET Power MOSFET | |
12 | IXFH110N25T |
IXYS Corporation |
TrenchHV Power MOSFET HiPerFET |