The IS66/67WVO8M8DALL/BLL are integrated memory device containing 64Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports Octal Peripheral Interface (Address, Command, and Data through 8 SIO pins), Very Low Signal Count (11 signal pins; SCLK, CS#, DQSM, and 8 SIOs), Hidden Refresh Operatio.
• Industry Standard Serial Interface
- Octal Peripheral Interface (OPI) Protocol - Low Signal Counts :11 Signal pins (CS#,
SCLK, DQSM, SIO0~SIO7)
• High Performance
- Up to 400MB/s - Double Transfer Rate (DTR) Operation - 200MHz (400MB/s) at 105°C - 166MHz (332MB/s) at 125°C - Source Synchronous Output signal during
Read Operation (DQSM) - Data Mask during Write Operation
(DQSM) - Configurable Latency for Read/Write
Operation) - Supports Variable Latency mode and
Fixed Latency mode - Configurable Drive Strength - Supports Wrapped Burst mode and
Continuous Burst mode - Supports Deep Power Down .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS67WVO8M8DALL |
ISSI |
64Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY | |
2 | IS67WVO16M8EDALL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY | |
3 | IS67WVO16M8EDBLL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY | |
4 | IS67WVO32M8DALL |
ISSI |
256Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY | |
5 | IS67WVO32M8DBLL |
ISSI |
256Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY | |
6 | IS67WVO4M8FALL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY | |
7 | IS67WVO4M8FBLL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY | |
8 | IS67WV1M16EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
9 | IS67WV51216DBLL |
Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
10 | IS67WV51216EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
11 | IS67WVC1M16ALL |
ISSI |
16Mb Async/Page/Burst CellularRAM | |
12 | IS67WVC2M16EALL |
ISSI |
32Mb Async/Page/Burst CellularRAM |