CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. This device is a variation of the industry-standard Flash control interface that dramatically increase READ/WRITE bandwidth compared with .
⚫ Single device supports asynchronous , page, and burst operation
⚫ Mixed Mode supports asynchronous write and synchronous read operation
⚫ Dual voltage rails for optional performance
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
⚫ Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns
⚫ Burst mode for Read and Write operation
4, 8, 16,32 or Continuous
⚫ Low Power Consumption
Asynchronous Operation < 30 mA
Intrapage Read < 20mA
Burst operation < 45 mA (@104Mhz)
Standby < 150 uA(max.)
Deep power-down (DPD) < 3uA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS67WVC2M16ECLL |
ISSI |
32Mb Async/Page/Burst CellularRAM | |
2 | IS67WVC1M16ALL |
ISSI |
16Mb Async/Page/Burst CellularRAM | |
3 | IS67WVC4M16ALL |
ISSI |
64Mb Async/Page/Burst CellularRAM | |
4 | IS67WVC4M16EALL |
ISSI |
64Mb Async/Page/Burst CellularRAM | |
5 | IS67WVC4M16ECLL |
ISSI |
64Mb Async/Page/Burst CellularRAM | |
6 | IS67WV1M16EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
7 | IS67WV51216DBLL |
Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
8 | IS67WV51216EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
9 | IS67WVE1M16EALL |
ISSI |
16Mb Async/Page PSRAM | |
10 | IS67WVE1M16EBLL |
ISSI |
16Mb Async/Page PSRAM | |
11 | IS67WVE1M16ECLL |
ISSI |
16Mb Async/Page PSRAM | |
12 | IS67WVE1M16TALL |
ISSI |
16Mb Async/Page PSRAM |