IS67WVE4M16TCLL - ISSI

IS67WVE4M16TCLL 64Mb Async/Page PSRAM

IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Parti.

Features

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 60ns, 70ns
 Intrapage Read access : 25ns
 Low Power Consumption
 Asynchronous Operation < 30 .