IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Parti.
Asynchronous and page mode interface
Dual voltage rails for optional performance
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
Page mode read access
Interpage Read access : 60ns, 70ns
Intrapage Read access : 25ns
Low Power Consumption
Asynchronous Operation < 30 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS67WVE4M16TALL |
ISSI |
64Mb Async/Page PSRAM | |
2 | IS67WVE4M16TCLL |
ISSI |
64Mb Async/Page PSRAM | |
3 | IS67WVE4M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
4 | IS67WVE4M16EALL |
ISSI |
64Mb Async/Page PSRAM | |
5 | IS67WVE4M16EBLL |
ISSI |
64Mb Async/Page PSRAM | |
6 | IS67WVE4M16ECLL |
ISSI |
64Mb Async/Page PSRAM | |
7 | IS67WVE1M16EALL |
ISSI |
16Mb Async/Page PSRAM | |
8 | IS67WVE1M16EBLL |
ISSI |
16Mb Async/Page PSRAM | |
9 | IS67WVE1M16ECLL |
ISSI |
16Mb Async/Page PSRAM | |
10 | IS67WVE1M16TALL |
ISSI |
16Mb Async/Page PSRAM | |
11 | IS67WVE1M16TBLL |
ISSI |
16Mb Async/Page PSRAM | |
12 | IS67WVE1M16TCLL |
ISSI |
16Mb Async/Page PSRAM |