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IS61LV25616 - Integrated Circuit Solution

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IS61LV25616 256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

The 1+51 IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a sta.

Features

• • • • • 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available DESCRIPTION The 1+51 IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circu.

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Datasheet IS61LV25616 - ISSI IS61LV25616

The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated u.

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