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IS61LV12816LL - Integrated Silicon Solution

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IS61LV12816LL 128K x 16 HIGH-SPEED CMOS STATIC RAM

The ISSI IS61LV12816L/IS61LV12816LL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the d.

Features


• High-speed access time: IS61LV12816L: 8, 10 ns IS61LV12816LL: 12, 15 ns
• Operating Current: IS61LV12816L: 50mA (typ.) IS61LV12816LL: 25mA (typ.)
• Stand by Current: IS61LV12816L: 500µA (typ.) IS61LV12816LL: 250µA(typ.)
• TTL and CMOS compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61LV12816L/IS61LV12816LL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. .

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