DDR2 SDRAM (128Mx8) TW-BGA Ball-out (Top-View) (8.00mm x 10.50mm) Symbol CK, CK# CKE CS# RAS#,CAS#,WE# A[13:0] BA[2:0] DQ[7:0] DQS, DQS# RDQS, RDQS# DM VDD VSS VDDQ VSSQ VREF VDDL VSSDL ODT NC Description Input clocks Clock enable Chip Select Command control pins Address Bank Address I/O Data Strobe Redundant Data Strobe Input data mask Supply voltage Grou.
Clock frequency up to 400MHz
8 internal banks for concurrent operation
4-bit prefetch architecture
Programmable CAS Latency: 3, 4, 5, 6 and 7
Programmable Additive Latency: 0, 1, 2, 3, 4, 5
and 6
Write Latency = Read Latency-1
Programmable Burst Sequence: Sequential or
Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 s (8192 cycles/64 ms)
ODT (On-Die Termination)
Weak Strength Data-Output Driver Option
Bidirectional differential Data Strobe (Single-
ended d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS46DR16640B |
ISSI |
1Gb DDR2 SDRAM | |
2 | IS46DR16640C |
ISSI |
DDR2 DRAM | |
3 | IS46DR16640D |
ISSI |
64Mx16 DDR2 DRAM | |
4 | IS46DR16640DL |
ISSI |
64Mx16 DDR2 DRAM | |
5 | IS46DR16128C |
ISSI |
DDR2 DRAM | |
6 | IS46DR16160B |
ISSI |
DDR2 DRAM | |
7 | IS46DR16320B |
ISSI |
512Mb DDR2 SDRAM | |
8 | IS46DR16320D |
ISSI |
DDR2 DRAM | |
9 | IS46DR16320E |
ISSI |
DDR2 DRAM | |
10 | IS46DR32160C |
ISSI |
16Mx32 512Mb DDR2 DRAM | |
11 | IS46DR32801A |
ISSI |
8Mx32 256Mb DDR2 DRAM | |
12 | IS46DR32801B |
ISSI |
256Mb DDR2 DRAM |