These IS42/45VM32800M are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achie.
▪ JEDEC standard 1.8V power supply
• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade)
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
• Programmable CAS Latency : 2, 3 clocks
• All inputs and outputs referenced to the positive edge of the system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support
- PASR(Partial Array Self Refresh) - Auto TCSR(Temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS45VM32800E |
ISSI |
2M x 32Bits x 4Banks Mobile Synchronous DRAM | |
2 | IS45VM32100D |
ISSI |
512K x 32Bits x 2Banks Low Power Synchronous DRAM | |
3 | IS45VM32160D |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM | |
4 | IS45VM32160E |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM | |
5 | IS45VM32200M |
ISSI |
512K x 32Bits x 4Banks Mobile Synchronous DRAM | |
6 | IS45VM32400E |
ISSI |
128Mb Mobile Synchronous DRAM | |
7 | IS45VM32400G |
ISSI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM | |
8 | IS45VM32400H |
ISSI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM | |
9 | IS45VM16160E |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM | |
10 | IS45VM16160M |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM | |
11 | IS45VM16200D |
ISSI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM | |
12 | IS45VM16800E |
ISSI |
128Mb Mobile Synchronous DRAM |